Growth of GaN on SiC(0001) by Molecular Beam Epitaxy

Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy

We have investigated optimal conditions for molecular beam epitaxial growth of high quality GaN on 6H-SiC(0001) substrates. The quality of these films is reflected in both the narrow x-ray peakwidths as well as the excellent surface morphology. In this work, it is shown that increasing growth temperature leads to an improvement in bulk quality and lower xray peakwidth for both symmetric and asy...

Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6HSiC(0001) substrates with no miscut and with 3.5° miscuts in both the [1 1 00] and [11 2 0] directions. The hydrogen-etched substrates display straight or chevron shaped steps, respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films ...

Properties of GaN grown at high rates on sapphire and on 6H–SiC

Thick GaN films were deposited with growth rates as high as 250 mm/h by the direct reaction of ammonia and gallium vapor at 1240 °C. The characteristics of our films are comparable to those of typical thin films grown by metal organic chemical vapor deposition or molecular beam epitaxy. Grown under identical conditions, films on ~0001! sapphire and on ~0001! 6H–SiC were compared in terms of the...

Reduction of threading defects in GaN grown on vicinal SiC„0001... by molecular-beam epitaxy

Advances in the molecular-beam epitaxial growth of artificially layered heteropolytypic structures of SiC

The controlled growth of SiC heteropolytypic structures consisting of hexagonal and cubic polytypes has been performed by solid-source molecular-beam epitaxy. On on-axis substrates, 4H/3C/4H–SiC~0001! and 6H/3C/6H–SiC~0001! structures were obtained by first growing the 3C–SiC layer some nanometer thick at lower substrate temperatures (T51550 K) and Si-rich conditions and a subsequent growth of ...